Package Type
|
Power QFN
|
Power QFN
3 x 3 mm Dimensions
|
Package Dimension
Die Pad Dimension
Maximum Die Size
|
18.1 x 118.1 x 39.4 mils
99.2 x 82.7 mils
82.3 x 66.7 mils
|
Power QFN
3.3 x 3.3 mm Dimensions
|
Package Dimension
Die Pad Dimension
Maximum Die Size
|
129.9 x 129.9 x 39.4mils
114.2 x 86.6 mils
98.2 x 70.6 mils |
Power QFN
5 x 6 mm Dimension
|
Package Dimension
Die Pad Dimension
Maximum Die Size
|
196.9 x 236.2 x 34.9 mils
177.9 x 131.1 mils
161.9 x 115.1 mils
|
Materials |
Lead Frame
Die Attach
Clip Frame (Option)
Wirebond (Option)
Molding Compound
Lead Finish |
C194
Solder Paste
88Pb/10Sn/02Ag, 95Pb/5Sn
C194 Al/Gold/Al ribbon
"Green" material
100% Sn |
Package Characteristics
3 x 3 mm
|
Power Dissipation
Thermal Resistance
Junction-to-Ambient
Electrical Performance
Voltage Rating
Current Rating |
0.7 Watt
120 ºC/W
320 Volts
0.15 Ampere |
Package Characteristics
3. x3 x 3.3 mm
|
Power Dissipation
Thermal Resistance
Junction-to-Ambient
Junction-to-Case
Electrical Performance
Voltage Rating
Current Rating |
69 Watts
45 ºC/W
2 ºC/W
40 Volts
40 Amperes |
Package Characteristics
5 x 6
|
Power Dissipation
Thermal Resistance
Junction-to-Ambient
Junction-to-Case
Electrical Performance
Voltage Rating
Current Rating
VGS = 10V, Tc =25ºC
Parasitic Resistance
Parasitic Inductance
Parasitic RDSon
|
7 Watts
40 ºC/W
1 ºC/W
25 Volts
25 Amperes
0.12 mΩ
0.59 nH
2.29 mΩ |
Product Applications |
Diodes (Small Signal Diodes, Zener Diodes)
Small Signal and Switching Transistors (Bipolar Small Signal Junction Transistors, Field Effect Transistors)
Thyristors, Standard Linear Analog (Amplifiers, Voltage Regulators and References)
MOS Logic
|